Design rules for field plate edge termination in SiC Schottky diodes
Design rules for field plate edge termination in SiC Schottky diodes
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DOI：
10.1109/16.974686
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发表时间：
2001-12
影响因子：
3.1
通讯作者：
M. Tarplee;V. Madangarli;Q. Zhang;T. Sudarshan
中科院分区：
文献类型：
--
作者：
M. Tarplee;V. Madangarli;Q. Zhang;T. Sudarshan
结合场极板的碳化硅肖特基二极管的实际设计需要了解场极板的添加如何影响性能参数以及二极管结构与二极管性能之间的关系。本文提出了采用场极板边缘端接的SiC肖特基二极管的设计原则。采用合适的场极板边缘端接可以使SiC肖特基二极管的反向击穿电压提高两倍。反向击穿电压值可以达到理论最大值的88%。
Practical design of silicon carbide (SiC) Schottky diodes incorporating a field plate necessitates an understanding of how the addition of the field plate affects the performance parameters and the relationship between the diode structure and diode performance. In this paper, design rules are presented for SiC Schottky diodes that incorporate field plate edge termination. The use of an appropriate field plate edge termination can improve the reverse breakdown voltage of a SiC Schottky diode by a factor of two. Reverse breakdown voltage values can be obtained that are up to 88% of the theoretical maximums.