Development of New Apparatus for Field Emission Measurement
Development of New Apparatus for Field Emission Measurement
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新型场发射测量仪器的研制
DOI：
10.1143/jjap.39.3596
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发表时间：
2000
影响因子：
1.5
通讯作者：
K. Oura
中科院分区：
文献类型：
--
作者：
Kuei;Jeong;D. Arimatsu;Hidekazu Kohara;M. Katayama;Xiao Guang Wang;T. Hirao;K. Oura
研制了一种场发射测量轮廓仪，不仅可以测量整个薄膜及其局部点的场发射，还可以呈现电流密度分布的二维图。该装置在超高真空条件下运行，测量射频磁控溅射系统沉积的非晶碳（a-C）薄膜的场发射分布。 The results show that the film surface consists of strong and weak emission sites.我们还获得了强发射点和弱发射点的微米量级的场发射图；这些可以帮助我们了解场发射的机理，从而改进薄膜生长过程。
A field emission measurement profiler, which not only can measure the field emission of the entire film as well as its local points but also can present a two-dimensional map of the current density distribution, is developed. This apparatus is operated under an ultrahigh vacuum condition to measure the field emission distribution of amorphous carbon (a-C) films deposited by a RF magnetron sputtering system. The results show that the film surface consists of strong and weak emission sites. We also obtain the field emission maps of micrometer order from strong and weak emission sites; these can help us understand the mechanism of field emission for improving the procedure for growing films.