Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias
Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias
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DOI：
10.1063/1.2182011
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发表时间：
2006-03
影响因子：
4
通讯作者：
A. Sarua;H. Ji;M. Kuball;M. Uren;T. Martin;K. Nash;K. Hilton;R. Balmer
中科院分区：
文献类型：
--
作者：
A. Sarua;H. Ji;M. Kuball;M. Uren;T. Martin;K. Nash;K. Hilton;R. Balmer
利用显微拉曼光谱研究了AlGaN scinGaN异质结场效应晶体管在偏压下的压电应变。通过透明SiC衬底进行测量。GaN层中的应变在器件区域上变化，并且取决于偏置电压，并且特别地影响栅极-漏极间隙和漏极接触下方的区域。在GaN中观察到的应变被证明是与垂直于表面的电场分量。电场分布的有限元模拟结果与实验数据定性一致。本文还讨论了应变对晶体管中拉曼温度测量的影响。
Micro-Raman spectroscopy was used to study piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias. The measurements were made through the transparent SiC substrate. Strain in the GaN layer varied over the device area and was dependent on bias voltage, and affected, in particular, the gate-drain gap and area underneath the drain contact. The observed strain in GaN was shown to be related to the electric field component normal to the surface. Finite element simulations of electric field distribution show good qualitative agreement with the experimental data. Effects of strain on Raman temperature measurements in transistors are also discussed.