Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75-4.2 μm
Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75-4.2 μm
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DOI：
10.1063/1.126968
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发表时间：
2000-07-17
影响因子：
4
通讯作者：
Cho, AY
中科院分区：
文献类型：
--
作者：
Gmachl, C;Ng, HM;Cho, AY
在窄的15-30埃宽的GaN/AlGaN量子阱中测量了子带间光吸收。采用分子束外延法在蓝宝石衬底上生长，势垒AlN摩尔分数在0.45 ~ 0.8之间变化。30埃宽井的峰值吸收波长为4.2 μ m， 15埃宽井的峰值吸收波长为1.77 μ m。模拟表明，类似于150兆电子伏的吸收的相当大的光谱宽度的很大贡献可能来自单层波动。除了成分相关的波段偏移外，阱和势垒中的本征电场是最短可能波长的决定因素。(C) 2000年美国物理研究所。[s0003 - 6951(00) 05029 - 4]。
Intersubband optical absorption in narrow, 15-30 Angstrom wide, GaN/AlGaN quantum wells has been measured. The samples were grown by molecular-beam epitaxy on sapphire substrate and the barrier AlN mole fraction was varied from 0.45 to 0.8. Peak absorption wavelengths ranged from 4.2 mu m for 30 Angstrom wide wells to 1.77 mu m for a 15 Angstrom wide well. Modeling shows that a large contribution to the considerable spectral width of the absorption of similar to 150 meV likely results from monolayer fluctuations. In addition to the composition dependent band offset, the intrinsic electric fields in the wells and barriers are the determining factors for the shortest possible wavelength. (C) 2000 American Institute of Physics. [S0003-6951(00)05029-4].