On the degradation of organic field-effect transistors
On the degradation of organic field-effect transistors
复制标题
关于有机场效应晶体管的退化
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
U. Hilleringmann
中科院分区：
文献类型：
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作者：
C. Pannemann;T. Diekmann;U. Hilleringmann
用p导电有机半导体并五苯制成的有机薄膜晶体管（OTFT）的降解实验表明，晶体管的电参数与环境条件有明显的相关性。在黑暗的环境空气条件下未加保护的样品在降解9个月后仍能正常工作。导通电流每季度减少一个数量级，阈值电压移至负值。为了研究大气中各种气体的影响，在真空条件下对OTFT进行了表征，并将其暴露在不同的气体中。由于氧与并五苯反应形成的散射中心，无保护的有机薄膜暴露于氧气中导致导通电流、通断比减小和阈值电压正移位。重新建立真空条件后，氮气使导通电流呈可逆趋势下降。
Degradation experiments with organic thin film transistors (OTFT) made of the p-conducting organic semiconductor pentacene revealed a distinct dependence of the electrical transistor parameters to the ambient conditions. A sample that was kept unprotected in dark ambient air conditions was found to be still operating after 9 months of degradation. The on-current was reduced by one order of magnitude per quarter year and the threshold voltage shifted to negative values. To study the influence of the respective gases of the atmosphere, an OTFT was characterized in vacuum conditions and exposed to the distinct gases. The exposure of the unprotected organic film to oxygen resulted in a decreasing on-current, on-off ratio and a positive shift of the threshold voltage, due to scattering centers formed by the reaction of oxygen with the pentacene. Nitrogen caused a decrease of the on-current with reversible tendency when the vacuum conditions were re-established.