A subversive innovation on GaN P-type reflective electrode using electroless silver plating
A subversive innovation on GaN P-type reflective electrode using electroless silver plating
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DOI：
10.1109/sslchina.2015.7360679
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发表时间：
2015-12
期刊：
影响因子：
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通讯作者：
Qinjin Wang;Jun Ma;Teng Zhan;X. Yi;Enqing Guo;Zhiqiang Liu;Ting Wang;Xiansong Fu;Junxi Wang;Guohong Wang;Jinmin Li
中科院分区：
文献类型：
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作者：
Qinjin Wang;Jun Ma;Teng Zhan;X. Yi;Enqing Guo;Zhiqiang Liu;Ting Wang;Xiansong Fu;Junxi Wang;Guohong Wang;Jinmin Li
在这项工作中，我们首次提出了一种在倒装芯片LED(FCLED)中使用GaN p型反射电极的创新方法，即化学镀银(ESP)。在我们的电除尘方法中，我们使用化学方法来形成完美的银反射层，不同于传统的电子束沉积(EB)制备p型反射电极。在我们的研究中，电除尘器形成的银反射电极具有更好的光学和电学特性。与EB相比，ESP电极在整个可见光光谱上的反射率为93%，高于EB样品的82%。此外，金属与GaN之间的欧姆接触特性也表现出与反射率相同的规律。电除尘器的比接触电阻分别为6.5×10~(-3)Ω·cm~2和6×10~(-2)Ω·cm~2。此外，I-V和L-I测量的奇妙结果也同样证实了化学镀银是一种潜在的p型反射电极制造技术。
In this work, we first proposed an innovation on GaN p-type reflective electrode in flip-chip LEDs (FCLEDs) using a novel method so called electroless silver plating (ESP). In our ESP method, we use chemical way to form a perfect Ag reflector, differ from traditional fabrication of p-type reflective electrode using electron beam deposition (EB). Under our investigation, the Ag reflective electrode formed by ESP possesses better optical and electric characteristics. Compared with EB, the reflectance of electrode by ESP over the whole visible light spectrum was 93%, higher than EB samples, which only show 82%. Otherwise, ohmic contact characteristic between metal and GaN also shows the same rule as reflectance. ESP samples exhibit better specific contact resistance than EB samples, they're 6.5 * 10-3Ω · cm2 and 6 * 10-2Ω· cm2, respectively. Moreover, the fantastic results of I-V as well as L-I measurement likewise verify electroless silver plating to be a potential manufacturing technology of p-type reflective electrode.