Characterization of Various Centers in Synthetic Type Ib Diamond under HPHT Annealing
Characterization of Various Centers in Synthetic Type Ib Diamond under HPHT Annealing
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HPHT 退火下合成 Ib 型金刚石中各个中心的表征
DOI：
10.1021/acs.cgd.8b00145
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发表时间：
2018-07-01
影响因子：
3.8
通讯作者：
Jia, Xiaopeng
中科院分区：
文献类型：
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作者：
Chen, Ning;Ma, Hongan;Jia, Xiaopeng
在本研究中，Ib型金刚石在2.5 GPa的压力和1680 ~ 2060℃的高温范围下成功进行了退火实验。随着退火温度的升高，金刚石的颜色由黄色变为淡黄色，氮(N)态由孤立的c中心变为聚集的a中心。当退火温度在1840℃以下时检测到NV0中心，当温度达到1920℃时检测不到NV0中心，在1920℃时，NV-中心比NV0中心更稳定，当退火温度达到1990℃时，NE8中心出现在金刚石晶格中。当退火压力从2.5 ~ 5 GPa变化时，高压会限制金刚石晶格中a中心N的形成，但对NV中心的形成影响不大。这是目前已知的首次在2.5 GPa的低压下成功制备IaA型金刚石的报道。我们的实验结果有助于进一步了解金刚石晶格中各种中心的形成，并为珠宝市场上区分退火合成金刚石和天然金刚石提供数据。
In this study, type Ib diamond annealing experiments were successfully performed under a pressure of 2.5 GPa and a high temperature range between 1680 and 2060 degrees C. The color of the diamond changed from yellow to light yellow, and the nitrogen (N) state changed from the isolate C-center to the aggregated A-center as the annealing temperature increased. The NV0 center was detected when the annealing temperature was under 1840 degrees C, and not detected when the temperature reached 1920 degrees C. The NV- center was more stable than the NV0 center at an annealing temperature of 1920 degrees C. When the annealing temperature reached 1990 degrees C, the NE8 center appeared in the diamond lattice. When the annealing pressure changed from 2.5 to 5 GPa, high pressure would restrict the formation of A-center N but hardly affected the formation of NV- center in the diamond lattice. This was the first known report on the successful preparation of the type IaA diamond under a lower pressure of 2.5 GPa. Our experiment results could be helpful for further understanding the formation of various centers in the diamond lattice and provided data for distinguishing the annealed synthesized diamond from the natural diamond in the jewelry market.