Influence of deposition rate on the properties of thick YBa_2Cu_3O_7–δ films
Influence of deposition rate on the properties of thick YBa_2Cu_3O_7–δ films
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沉积速率对YBa_2Cu_3O_7–δ厚膜性能的影响
DOI：
10.1557/jmr.1997.0388
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发表时间：
1997
影响因子：
2.7
通讯作者：
D. Peterson
中科院分区：
文献类型：
--
作者：
S. Foltyn;E. Peterson;J. Coulter;P. Arendt;Q. Jia;P. Dowden;M. Maley;X. Wu;D. Peterson
为了研究高质量YBa_2Cu_3O_7 -δ沉积速率的潜在限制，我们在SrTiO_3单晶衬底上用脉冲激光沉积了一系列1 μm厚的薄膜，平均沉积速率为2 Å/s ~ 240 Å/s。在75 K自场下，低速率薄膜的临界电流密度大于2 MA/cm^2，但在该范围的上端随速率线性下降至约1 MA/cm^2。此外，随着沉积速率的增加，超导转变温度、转变上方的电阻率和外加磁场中的性能都有所下降。c轴晶格参数的变化表明，这种降解的可能原因是缺氧或阳离子紊乱，后者更有可能。高速率薄膜在790°C下退火仅20分钟，将临界电流密度提高到低速率值的20%以内，并显著改善了薄膜的其他性能。
To investigate potential limits to the rate at which high-quality YBa_2Cu_3O_7–δ can be deposited, we have produced a series of 1 μm thick films by pulsed laser deposition on single-crystal SrTiO_3 substrates at average rates ranging from 2 Å/s to 240 Å/s. The critical current density of low-rate films was over 2 MA/cm^2 at 75 K, self field, but dropped linearly with rate to about 1 MA/cm^2 at the upper end of the range. In addition, the superconducting transition temperature, resistivity above the transition, and performance in an applied magnetic field were all degraded by increasing the deposition rate. A change in c -axis lattice parameter suggests that possible causes for this degradation are oxygen deficiency or cation disorder with the latter being the more likely. Annealing high-rate films at 790 °C for as little as 20 min improved critical current density to within 20% of low-rate values, and resulted in dramatic improvements in other film properties as well.