The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy
The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy
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DOI：
10.1063/1.4755765
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发表时间：
2012-09-24
影响因子：
4
通讯作者：
Schlom, Darrell G.
中科院分区：
文献类型：
--
作者：
Brooks, Charles M.;Misra, Rajiv;Schlom, Darrell G.
本文报道了在（111）MgAl_2O_4、（111）MgO和（0001）6 H-SiC衬底上生长的单相（0001）取向的电驱动多铁性LuFe_2O_4外延薄膜。膜的化学计量使用的吸附控制的生长过程中，通过沉积LuFe 2 O 4在富铁的环境中的压力和温度，其中过量的铁从膜表面解吸在生长过程中进行调节。扫描透射电子显微镜显示无反应的膜-基底界面。磁化强度迅速增加低于240 K，符合顺磁到亚铁磁相变散装LuFe 2 O 4。除了类似于0.35 eV的间接带隙之外，光谱学揭示了在伽马点处的3.4 eV的直接带隙。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4755765]
We report the growth of single-phase (0001)-oriented epitaxial films of the purported electronically driven multiferroic, LuFe2O4, on (111) MgAl2O4, (111) MgO, and (0001) 6H-SiC substrates. Film stoichiometry was regulated using an adsorption-controlled growth process by depositing LuFe2O4 in an iron-rich environment at pressures and temperatures where excess iron desorbs from the film surface during growth. Scanning transmission electron microscopy reveals reaction-free film-substrate interfaces. The magnetization increases rapidly below 240 K, consistent with the paramagnetic-to-ferrimagnetic phase transition of bulk LuFe2O4. In addition to the similar to 0.35 eV indirect band gap, optical spectroscopy reveals a 3.4 eV direct band gap at the gamma point. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4755765]