High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)
High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)
复制标题
采用MOBILE（单稳态-双稳态转换逻辑元件）的谐振隧道触发器电路的高速操作
DOI：
10.1049/el:19971176
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发表时间：
1997
影响因子：
1.1
通讯作者：
Masafumi Yamamoto
中科院分区：
文献类型：
--
作者：
K. Maezawa;H. Matsuzaki;K. Arai;T. Otsuji;Masafumi Yamamoto
提出了一种采用谐振隧道二极管/HEMT集成技术在InP衬底上制作的单稳态-双稳态转换逻辑元件的新型触发器电路。在室温下，无错误操作高达18 Gbit/s。
A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18 Gbit/s were demonstrated at room temperature.