Growth of Epitaxial Inas Nanowires in a Simple Closed System
Growth of Epitaxial Inas Nanowires in a Simple Closed System
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DOI：
10.1557/proc-0901-rb14-03
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发表时间：
2005-08
期刊：
影响因子：
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通讯作者：
H. D. Park;S. Prokes;R. Cammarata
中科院分区：
文献类型：
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作者：
H. D. Park;S. Prokes;R. Cammarata
本文描述了在密封石英管中在InAs（111）衬底上外延生长InAs纳米线的方法。该方法非常简单和快速，并且仅使用裸InAs衬底和金胶体涂覆的InAs（111）衬底。通过该技术可以制备出高质量的InAs纳米线。
The epitaxial growth of InAs nanowires on an InAs (111) substrate in a sealed quartz tube is described. The method is quite simple and fast, and uses only a bare InAs substrate and a gold colloid coated InAs (111) substrate. High quality InAs nanowires can be produced by this technique.