Scanning tunneling microscopy study of benzene adsorption on Si(100)-(2×1)
Scanning tunneling microscopy study of benzene adsorption on Si(100)-(2×1)
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Si(100)-(2×1)上苯吸附的扫描隧道显微镜研究
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
W. Weinberg
中科院分区：
文献类型：
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作者：
K. Self;R. Pelzel;J. Owen;C. Yan;W. Widdra;W. Weinberg
利用扫描隧道显微镜（STM）研究了苯在名义上平坦的Si（100）-（2×1）衬底上的吸附。STM图像显示，苯吸附在二聚体行的顶部，键合到两个Si-Si二聚体悬挂键。偏置依赖成像表明，吸附苯的最高占据分子轨道位于价带顶以下约1.2 eV，最低未占据分子轨道高于最高占据分子轨道至少3.5 eV。在较高的覆盖率下，苯分子沿着二聚体行沿着吸附在每隔一个二聚体上，并且在二聚体行之间每隔一个二聚体上吸附，导致局部c（4×2）周期性，这与单层的饱和覆盖率为10.25一致。
Scanning tunneling microscopy (STM) has been used to investigate the adsorption of benzene on nominally flat Si(100)-(2×1) substrates. STM images show that benzene adsorbs on top of the dimer rows bonding to the two Si–Si dimer dangling bonds. Bias-dependent imaging indicates that the highest occupied molecular orbital of adsorbed benzene lies approximately 1.2 eV below the top of the valence band and that the lowest unoccupied molecular orbital is at least 3.5 eV above the highest occupied molecular orbital. At higher coverages, the benzene molecules are adsorbed on every other dimer along the dimer row and on every other dimer across the dimer rows resulting in a local c(4×2) periodicity, in agreement with the saturation coverage of ∼0.25 monolayer.