1.5-μm optical up-conversion: wafer fusion and related issues
1.5-μm optical up-conversion: wafer fusion and related issues
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DOI：
10.1117/12.561087
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发表时间：
2004-11
期刊：
影响因子：
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通讯作者：
D. Ban;Hui Luo;Huichun C. Liu;A. Springthorpe;Z. Wasilewski;A. Bezinger;A. Bogdanov;M. Buchanan
中科院分区：
文献类型：
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作者：
D. Ban;Hui Luo;Huichun C. Liu;A. Springthorpe;Z. Wasilewski;A. Bezinger;A. Bogdanov;M. Buchanan
在近红外（NIR）中工作的成像设备，特别是在所谓的人眼安全范围内，即，在许多军事和商业应用中变得越来越重要;这些应用包括夜视、隐蔽监视、测距和半导体晶片检测。我们提出了一种新的方法，其中晶片融合的光学上变频器，与市售的电荷耦合器件（CCD）相结合，作为一个红外相机的功能。光学上转换器将入射的红外光转换为可以由硅CCD有效检测的较短波长辐射（截止波长约为1 mm）。室温下高效率的光学上转换器是低成本、大面积红外成像应用的关键。基于晶圆熔融技术的1.5 mm光学上变频器原型已经成功制作。该器件由InGaAs/InP pin光电探测器和GaAs/AlGaAs发光二极管组成。实验结果表明，在室温下，端到端上转换效率为0.0177 W/W，对应于76%的内量子上转换效率。本文介绍了光上转换器件的设计、制作和特性。与器件优化，如提高内部和外部的上转换效率的问题，得到解决。初步结果表明，室温上转换成像操作的像素化晶圆融合设备。
Imaging devices working in the near infrared (NIR), especially in the so-called eye-safe range, i.e., around 1.5 mm, have become increasingly important in many military and commercial applications; these include night vision, covert surveillance, range finding and semiconductor wafer inspection. We proposed a new approach in which a wafer-fused optical up-converter, combined with a commercially available charged coupled device (CCD), functions as an infrared camera. The optical up-converter converts incoming infrared light into shorter wavelength radiation that can be efficiently detected by the silicon CCD (cutoff wavelength about 1 mm). An optical up-converter with high efficiency at room-temperature is critical for low cost and large-area infrared imaging applications. A prototype 1.5 mm optical up-converter based on wafer fusion technology has been successfully fabricated. The device consists of an InGaAs/InP pin photodetector and a GaAs/AlGaAs light emitting diode. Experimental results show that the end-to-end up-conversion efficiency is 0.0177 W/W at room-temperature, corresponding to an internal quantum up-conversion efficiency of 76%. In this paper, the design, fabrications and characterization of the optical up-conversion devices is presented. Issues related to device optimization, such as improving internal and external up-conversion efficiency, are addressed. Preliminary results demonstrate the room-temperature up-conversion imaging operation of a pixelated wafer-fused device.