Ultraviolet second harmonic generation in radio‐frequency sputter‐deposited aluminum nitride thin films
Ultraviolet second harmonic generation in radio‐frequency sputter‐deposited aluminum nitride thin films
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射频溅射沉积氮化铝薄膜中紫外二次谐波的产生
DOI：
10.1063/1.112134
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发表时间：
1994
影响因子：
4
通讯作者：
J. Ketterson
中科院分区：
文献类型：
--
作者：
P. Lundquist;Wenbin Lin;Zu;G. Wong;E. Rippert;J. A. Helfrich;J. Ketterson
研究了射频溅射沉积AlN薄膜中从紫外到近红外的光学二次谐波产生。有效的二阶非线性系数χ（2）（ω）被确定为对于大于400 nm的二次谐波波长具有1.5 ×10−9 esu的非共振背景值，并且随着二次谐波频率接近6.2 eV的带隙而急剧增加。这可能是由于与AlN的直接带隙相关联的临界点跃迁的二次谐波频率的共振。
Optical second harmonic generation in radio‐frequency sputter‐deposited AlN thin films has been studied for harmonic wavelengths from ultraviolet to near infrared. The effective second‐order nonlinearity χ(2)(ω) was determined to have a nonresonant background value of ∼5×10−9 esu for second harmonic wavelengths longer than 400 nm, and it increases dramatically as the second harmonic frequency approaches the bandgap of 6.2 eV. This is likely due to resonance of the second harmonic frequency with the critical point transition associated with the direct bandgap of AlN.