Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors
Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors
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前栅绝缘体上 InGaAs 金属绝缘体半导体场效应晶体管
DOI：
10.1063/1.3528334
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发表时间：
2010
影响因子：
4
通讯作者：
S. Takagi
中科院分区：
文献类型：
--
作者：
Y. Urabe;M. Yokoyama;H. Takagi;T. Yasuda;N. Miyata;H. Yamada;N. Fukuhara;M. Hata;M. Takenaka;S. Takagi
我们报道了在标准前门结构的硅晶片上的In0.53Ga0.47As（100）金属-绝缘体-半导体场效应晶体管（InGaAs-OI misfet）。InGaAs- oi misfet的通道迁移率高于大块InP晶圆上的InGaAs misfet。通过施加后门偏置，开关比可以在很宽的范围内控制，这表明双栅极操作可以实现更高的驱动性和更低的功耗。
We report on In0.53Ga0.47As(100)-on-insulator metal-insulator-semiconductor field-effect transistors (InGaAs-OI MISFETs) on Si wafers with standard front-gate configuration. The channel mobility of the InGaAs-OI MISFETs was higher than those for InGaAs MISFETs on bulk InP wafers. The on/off ratio was controlled over a wide range by applying a back-gate bias, which indicates the possibility of double-gate operation for higher drivability and lower power consumption.