Low‐Temperature Sintering Microwave Dielectrics Using CuO‐Doped Zn(Nb0.95Ta0.05)2O6 Ceramics
Low‐Temperature Sintering Microwave Dielectrics Using CuO‐Doped Zn(Nb0.95Ta0.05)2O6 Ceramics
复制标题
使用 CuO 掺杂 Zn(Nb0.95Ta0.05)2O6 陶瓷低温烧结微波电介质
DOI：
10.1111/j.1551-2916.2010.03786.x
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发表时间：
2010
影响因子：
3.9
通讯作者：
Chang
中科院分区：
文献类型：
--
作者：
Chengxiong Huang;Jhih;Chang
研究了CuO对Zn(Nb0.95Ta0.05)2O6陶瓷的烧结行为、微波介电性能及其与Ag的化学相容性的影响。CuO的加入可以有效地将Zn(Nb0.95Ta0.05)2O6陶瓷的烧结温度降低到930℃，这是由于CuO的液相效应。(ZnCu2)(Nb0.95Ta0.05)2O8将被析出，并在最后阶段以晶相的形式存在。在样品的合成过程中，除了(ZnCu2)(Nb0.95Ta0.05)2O8液相外，还检测到了第二相Zn3(Nb0.95Ta0.05)2O8。与简单的Zn(Nb0.95Ta0.05)2O6相比，这两个相都表现出相对较低的ɛr和Q×f。Q×f值是烧结温度和CuO加入量的函数。当CuO加入量为4.5wt%时，当烧结温度从840℃升高到930℃，保温2 h时，其介电性能在8500~77~200 GHz之间变化。对于低烧成多层陶瓷，在930°C烧结2 h，可获得ɛr为22.87，Q×f为∼77~200 GHz，τf为∼−70.8 ppm/°C的综合介电性能。
The effect of CuO additions on the sintering behavior and microwave dielectric properties of Zn(Nb0.95Ta0.05)2O6 ceramic and its chemical compatibility with Ag have been investigated. The CuO addition can effectively lower the sintering temperature of Zn(Nb0.95Ta0.05)2O6 ceramics to 930°C due to the liquid phase effect. The (ZnCu2)(Nb0.95Ta0.05)2O8 liquid phase will be separated out and exists as a crystalline phase in the final stage. In addition to the (ZnCu2)(Nb0.95Ta0.05)2O8 liquid phase, a second phase Zn3(Nb0.95Ta0.05)2O8 is also detected during the synthesis of specimen. Both phases show a relatively low ɛr and Q×f values compared with that of simple Zn(Nb0.95Ta0.05)2O6. The Q×f value is a function of the sintering temperature and the amount of CuO addition. With 4.5 wt% CuO addition, it varies from 8500 to 77 200 GHz as the sintering temperature increases from 840° to 930°C for 2 h. For low-firing multilayer applications, a combination of dielectric properties with an ɛr of ∼22.87, a Q×f of ∼77 200 GHz, and a τf of ∼−70.8 ppm/°C can be achieved for 4.5 wt% CuO-doped Zn(Nb0.95Ta0.05)2O6 ceramic sintered at 930°C for 2 h.