Methods for Defect Evaluation of Thin Oriented Silicon Epitaxial Layers Using a Wet Chemical Etch
Methods for Defect Evaluation of Thin Oriented Silicon Epitaxial Layers Using a Wet Chemical Etch
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使用湿化学蚀刻评估薄取向硅外延层缺陷的方法
DOI：
10.1149/1.2124371
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发表时间：
1982
影响因子：
3.9
通讯作者：
V. Archer
中科院分区：
文献类型：
--
作者：
V. Archer
发展了取向硅的湿化学缺陷腐蚀诊断方法< i00>，已用于评价薄至4000埃的外延层。
Wet chemical defect etch diagnostic~ nethods for< i00> oriented silicon have been developed which have been used to evaluate epitaxial layers as thin as 4000A.