In Situ Sputtering From the Micromanipulator to Enable Cryogenic Preparation of Specimens for Atom Probe Tomography by Focused-Ion Beam.
In Situ Sputtering From the Micromanipulator to Enable Cryogenic Preparation of Specimens for Atom Probe Tomography by Focused-Ion Beam.
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DOI：
10.1093/micmic/ozad020
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发表时间：
2022-11
期刊：
影响因子：
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通讯作者：
J. Douglas;M. Conroy;F. Giuliani;B. Gault
中科院分区：
文献类型：
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作者：
J. Douglas;M. Conroy;F. Giuliani;B. Gault
在过去的十年中，已经开发了工作流程，以使原子探针层析成像分析在低温下。无法控制的局部沉积的金属前体从气体注入系统（GIS）在低温下，使准备特定地点的标本，通过使用提升在聚焦离子束极具挑战性。Schreiber等人利用再沉积将取出的样品焊接到支架上。在这里，我们建立在他们的方法来附加感兴趣的区域，并额外加强与显微操作器的局部溅射金属的界面。标准的聚焦离子束环形铣削后，我们演示了原子探针分析的Si在激光脉冲和电压模式，具有可比的分析性能作为一个presharpened微尖试样。我们的焊接方法是通用的，因为各种金属可用于溅射，并允许类似的灵活性，作为GIS的原则。
Workflows have been developed in the past decade to enable atom probe tomography analysis at cryogenic temperatures. The inability to control the local deposition of the metallic precursor from the gas-injection system (GIS) at cryogenic temperatures makes the preparation of site-specific specimens by using lift-out extremely challenging in the focused-ion beam. Schreiber et al. exploited redeposition to weld the lifted-out sample to a support. Here, we build on their approach to attach the region-of-interest and additionally strengthen the interface with locally sputtered metal from the micromanipulator. Following standard focused-ion beam annular milling, we demonstrate atom probe analysis of Si in both laser pulsing and voltage mode, with comparable analytical performance as a presharpened microtip coupon. Our welding approach is versatile, as various metals could be used for sputtering, and allows similar flexibility as the GIS in principle.