High Temperature Stable Acoustic Surface Wave Substrates of SiO2/LiNbO3 Structure with Super High Coupling
High Temperature Stable Acoustic Surface Wave Substrates of SiO2/LiNbO3 Structure with Super High Coupling
复制标题
超高耦合SiO2/LiNbO3结构高温稳定声表面波基片
DOI：
10.1143/jjap.41.3480
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发表时间：
2002
影响因子：
1.5
通讯作者：
T. Ishii
中科院分区：
文献类型：
--
作者：
K. Yamanouchi;T. Ishii
为了提高频率温度系数（TCF），本文从理论上研究了SiO2/旋转Y切、X向传播的具有大机电耦合系数（k2）、零衰减和零TCF的LiNbO 3漏声表面波（SAW）基片的传播特性。结果表明，在H/λ fallingdotseq = 0.15 -0.25（H：SiO_2膜厚，λ：SAW波长）的短边界条件下，漏声表面波的k ~ 2大于0.2（瑞利模k ~ 2为零），TCF为零，传播衰减为零。实验结果与理论分析相一致。
In this study, in order to improve the temperature coefficient of frequency (TCF), the propagation characteristics of SiO2/Rotated Y-cut, X-propagating LiNbO3 leaky surface acoustic wave (SAW) substrates with a large electromechanical coupling coefficient (k2), zero attenuation and zero TCF are theoretically investigated. The results showed a large k2 of more than 0.2 (zero k2 of Rayleigh mode), zero TCF and zero propagation attenuation for leaky SAW in the case of a short boundary at a thin film thickness of H/λ\fallingdotseq0.15–0.25 (H: SiO2 film thickness, λ: SAW wavelength). The experimental results agreed with the theoretical ones.