Design space and origin of off-state leakage in GaN vertical power diodes
Design space and origin of off-state leakage in GaN vertical power diodes
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DOI：
10.1109/iedm.2015.7409830
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发表时间：
2015-12
期刊：
影响因子：
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通讯作者：
Y. Zhang;H. Wong;M. Sun;S. Joglekar;L. Yu;N. Braga;R. Mickevicius;T. Palacios
中科院分区：
文献类型：
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作者：
Y. Zhang;H. Wong;M. Sun;S. Joglekar;L. Yu;N. Braga;R. Mickevicius;T. Palacios
通过位错的可变范围跳跃被确定为不同衬底上GaN垂直二极管的主要关态泄漏机制。通过TCAD模拟得到了垂直器件的漏电流随位错密度和电场的变化规律，并与实验和文献数据进行了仔细的校准。与GaN横向、Si和SiC器件相比，所设计的GaN垂直二极管表现出2-4个数量级的低漏电流，同时支持3-5倍的高电场。
Variable-range-hopping through dislocations was identified as the main off-state leakage mechanism for GaN vertical diodes on different substrates. The behavior of leakage current for vertical devices as a function of dislocation density and electric field was derived by TCAD simulations, after careful calibration with experiments and literature data. Designed GaN vertical diodes demonstrate 2-4 orders of magnitude lower leakage current while supporting 3-5 times higher electric field, compared to GaN lateral, Si and SiC devices.