Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO3(001) by Oxygen
Suppression of Ionic Liquid Gate-Induced Metallization of SrTiO3(001) by Oxygen
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DOI：
10.1021/nl402088f
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发表时间：
2013-10-01
期刊：
影响因子：
10.8
通讯作者：
Parkin, Stuart S. P.
中科院分区：
文献类型：
--
作者：
Li, Mingyang;Han, Wei;Parkin, Stuart S. P.
离子液体选通三端场效应晶体管器件的沟道发现从SrTiO_3（001）单晶诱导的金属态的沟道。我们表明，金属化的强烈影响的存在下引入外部的设备，而氩气和氮气没有效果的氧气。门控效应的抑制与电场诱导的氧迁移一致，我们通过氧诱导的载流子湮灭来建模。
Ionic liquid gating of three terminal field effect transistor devices with channels found from SrTiO3(001) single 'crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxyen gas introduced external to the device whereas argon and nitrogen ha e no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced Carrier annihilation.