Reactive ion etching (RIE) as a method for texturing polycrystalline silicon solar cells
Reactive ion etching (RIE) as a method for texturing polycrystalline silicon solar cells
复制标题
DOI：
10.1016/s0927-0248(97)00011-1
复制
发表时间：
1997-06
影响因子：
6.9
通讯作者：
S. Winderbaum;O. Reinhold;F. Yun
中科院分区：
文献类型：
--
作者：
S. Winderbaum;O. Reinhold;F. Yun
反应离子刻蚀（RIE）技术已经被应用并发展成为一种用于多晶硅太阳能电池织构化的方法。在这项工作中产生了两种结构（微槽和金字塔）。在400-1200 nm之间的反射率测量显示金字塔结构的总反射率为5.6%，凹槽结构的总反射率为7.9%。这些结果优于在单晶硅上使用湿法各向异性蚀刻技术的结果。RIE纹理上进行铸造多晶硅和生产更好的反射控制比标准的二氧化钛涂层。RIE纹理化还改变了光进入硅的入射角，这提高了对长波长的响应，可用于薄膜、多晶硅或非晶硅太阳能电池。
Reactive ion etching (RIE) has been applied and developed as a method for texturing polycrystalline silicon solar cells. Two structures (microgrooves and pyramids) were produced in this work. Reflectivity measurements between 400–1200 nm show an overall reflectance of 5.6% for pyramid and 7.9% for groove structures. These results are better than those using wet anisotropic etch techniques on single-crystal silicon. RIE texturing was performed on cast polycrystalline silicon and produced better reflection control than standard TiO2antireflection coatings. RIE texturing also changes the incidence angle of light into the silicon, this improves the response for long wavelengths which can be utilised in thin film, polycrystalline or amorphous silicon solar cells.