Spin-related current suppression in a semiconductor quantum dot spin-diode structure.
Spin-related current suppression in a semiconductor quantum dot spin-diode structure.
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DOI：
10.1103/physrevlett.102.236806
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发表时间：
2009-05
影响因子：
8.6
通讯作者：
Kohei Hamaya;M. Kitabatake;Kenji Shibata;Minkyung Jung;Shigeyuki Ishida;Tomoyasu Taniyama;Kazuhiko Hirakawa;Y. Arakawa;T. Machida
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文献类型：
--
作者：
Kohei Hamaya;M. Kitabatake;Kenji Shibata;Minkyung Jung;Shigeyuki Ishida;Tomoyasu Taniyama;Kazuhiko Hirakawa;Y. Arakawa;T. Machida
实验研究了由一个半导体量子点(QD)弱耦合到一个非磁性和一个铁磁(FM)引线组成的自旋二极管结构中的电子输运特性，其中QD具有人工原子性质。库仑稳定性钻石在偏置电压的极性方面表现出不对称的特征。对于双电子隧穿区域，我们发现正向偏置和反向偏置对电流的反常抑制。我们讨论了在两电子量子点的基态下，通过量子点-调频界面的自旋阻塞来抑制反常电流的可能机制。
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD-FM interface at the ground state of a two-electron QD.