Growth of magnetic materials and structures on Si(0 0 1) substrates using Co2Si as a template layer
Growth of magnetic materials and structures on Si(0 0 1) substrates using Co2Si as a template layer
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使用 Co2Si 作为模板层在 Si(0 0 1) 衬底上生长磁性材料和结构
DOI：
10.1016/j.apsusc.2008.02.193
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
J. Derrien
中科院分区：
文献类型：
--
作者：
S. O. Méndez;V. L. Thanh;A. Ranguis;J. Derrien
我们在本文中报告使用Co2 Si硅化物作为模板层的磁性材料和结构的集成在硅衬底上。通过在约300°C的温度下在硅上进行Co沉积，我们表明可以获得光滑且外延的Co2 Si层，其可以充当模板层，防止Co和其他过渡金属与硅之间的反应。在此模板层上的磁性材料和结构的过度生长的两个例子将被提出：铁磁Co层和磁性隧道结（Co（Fe）/AlOx/NiFe）的生长。
We report in this paper the use of Co2Si silicide as a template layer for the integration of magnetic materials and structures on silicon substrate. By undertaking Co deposition on silicon at a temperature of about 300°C, we show that it is possible to obtain a smooth and epitaxial Co2Si layer, which can act as a template layer preventing the reaction between Co and other transition metals with silicon. Two examples of over-growth of magnetic materials and structures on this template layer will be presented: growth of ferromagnetic Co layers and of magnetic tunnel junctions (Co(Fe)/AlOx/NiFe).