Investigation of molecular‐beam epitaxially grown CdTe on GaAs by x‐ray photoelectron spectroscopy
Investigation of molecular‐beam epitaxially grown CdTe on GaAs by x‐ray photoelectron spectroscopy
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DOI：
10.1063/1.347118
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发表时间：
1990-07
影响因子：
3.2
通讯作者：
A. Waag;Y. Wu;R. Bicknell-Tassius;C. Gonser-Buntrock;G. Landwehr
中科院分区：
文献类型：
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作者：
A. Waag;Y. Wu;R. Bicknell-Tassius;C. Gonser-Buntrock;G. Landwehr
报道了CdTe-GaAs界面的X射线光电子能谱研究。如果选择合适的生长参数，CdTe在GaAs上的生长起始可以接近化学计量比。发现这两种材料之间的价带偏移很大（470 meV）。Cd-Te-metal-GaAs多层膜已经用非常薄的金属膜生长。CdTe-GaAs能带偏移不受这种中间金属层的影响。实验获得的价带偏移值与最近的理论计算进行比较，考虑到界面偶极子。
X‐ray photoelectron spectroscopy studies of CdTe‐GaAs interfaces are reported. The growth start of CdTe on GaAs can be nearly stoichiometric if convenient growth parameters are chosen. The valence‐band offset between these two materials is found to be large (470 meV). Cd‐Te‐metal‐GaAs multilayers have been grown with very thin metal films. The CdTe‐GaAs band offset is not influenced by such intermediary metal layers. The experimentally obtained value for the valence‐band offset is compared with recent theoretical calculations taking into account interface dipoles.