A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
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DOI：
10.1109/t-ed.1974.17955
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发表时间：
1974-08
影响因子：
3.1
通讯作者：
Shu-yau Wu
中科院分区：
文献类型：
--
作者：
Shu-yau Wu
用射频溅射法在体半导体（硅）上沉积钛酸铋（Bi 4 Ti 3 O 12）铁电薄膜，成功地证明了其铁电场效应。一种新的存储器件，金属铁电半导体晶体管（MFST），已被制作。该器件利用铁电薄膜的反射极化来控制体半导体衬底的表面电导率并执行存储功能。利用金属-铁电-半导体结构的电容-电压特性研究了其存储行为。详细的研究连同MFST的初步结果。
The ferroelectric field effect has successfully been demonstrated on a bulk semiconductor (silicon) using a thin ferroelectric film of bismuth titanate (Bi 4 Ti 3 O 12 ) deposited onto it by RF sputtering. A new memory device, the metal-ferroelectric-semiconductor transistor (MFST); has been fabricated. This device utilizes the remanent polarization of a ferroeletric thin film to control the surface conductivity of a bulk semiconductor substrate and perform a memory function. The capacitance-voltage characteristics of the metal-ferroelectric-semiconductor structure were employed to study the memory behavior. The details of the study together with a preliminary results on the MFST are presented.