Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate
Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate
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DOI：
10.35848/1882-0786/ac279c
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发表时间：
2021-09
影响因子：
2.3
通讯作者：
Xin Chen;Y. Zhong;Xiaolu Guo;Shumeng Yan;Yu Zhou;Shuai Su;Hongwei Gao;Xiaoning Zhan;Zihui Zhang;W. Bi;Qian Sun;Hui Yang
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文献类型：
--
作者：
Xin Chen;Y. Zhong;Xiaolu Guo;Shumeng Yan;Yu Zhou;Shuai Su;Hongwei Gao;Xiaoning Zhan;Zihui Zhang;W. Bi;Qian Sun;Hui Yang
本文研究了两种常关型p-GaN栅高电子迁移率晶体管中陷阱对反向栅漏的影响。p-GaN/AlGaN/GaN结中不同的受主陷阱对载流子的行为有很大的影响，从而影响了漏电流机制。当陷阱密度较低时（Ev +0.6eV），器件的反向栅电流主要由Poole-Frenkel过程控制。对于异常器件，已经证实了高密度的新陷阱，其能级为10.8eV，导致陷阱辅助隧穿，从而导致相对高的反向栅极泄漏。
The influence of traps on the reverse gate leakage has been studied for two kinds of normally-off high-electron-mobility transistors with regrown p-GaN gate. Different acceptor traps in the p-GaN/AlGaN/GaN junction dramatically impact carrier behaviors, affecting the leakage mechanisms. The reverse gate current of the normal devices with a low density of traps which located at E V + 0.6 eV is dominated by Poole–Frenkel process. For the abnormal devices, a high density of new traps have been confirmed with an energy level of ∼0.8 eV, resulting in a trap-assisted tunneling thus a relatively high reverse gate leakage.