The Effects of Hydrogen Iodide Back Surface Treatment on CdTe Solar Cells
The Effects of Hydrogen Iodide Back Surface Treatment on CdTe Solar Cells
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DOI：
10.1002/solr.201800304
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发表时间：
2019-03-01
期刊：
影响因子：
7.9
通讯作者：
Yan, Yanfa
中科院分区：
文献类型：
--
作者：
Awni, Rasha A.;Li, Deng-Bing;Yan, Yanfa
CdTe太阳能电池中合适的电背接触对于实现高功率转换效率至关重要。本文提出了一种简便的CdTe太阳电池背表面处理方法，并研究了氢碘酸（HI）刻蚀对CdTe表面的影响。通过电流-电压、电容-电压、导纳谱和复电容谱测量，表征了CdTe吸收体和界面的电学性质。HI蚀刻的装置显示出比对照装置略高的表观载流子浓度，表明在CdTe吸收剂中增加了铜掺杂。HI处理后，背接触的势垒高度从0.430 eV降低到0.368 eV，同时接触电阻和载流子复合也降低。此外，HI处理消除了0.409 eV处的缺陷特征。HI处理效应通过增强填充因子、短路电流和开路电压而导致改善的功率转换效率。
An appropriate electrical back contact in CdTe solar cells is crucial to achieving high power conversion efficiency. In this work, a facile back surface treatment method for CdTe solar cells using hydroiodic acid (HI) is developed, and the effects of HI etching on the CdTe surfaces investigated. The electrical properties of the CdTe absorber and interfaces are characterized by current-voltage, capacitance-voltage, admittance spectroscopy, and complex capacitance spectroscopy measurements. The HI-etched devices show slightly higher apparent carrier concentrations than the control devices, suggesting an increased copper doping in the CdTe absorber. The potential barrier height of the back contact is reduced from 0.430 to 0.368 eV after the HI-treatment, accompanied by reduced contact resistance and carrier recombination. Additionally, the HI-treatment eliminates a defect signature at 0.409 eV. The HI-treatment effects lead to improved power conversion efficiency through enhancement of the fill factor, the short circuit current, and open circuit voltage.