Probing the origin of extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides
Probing the origin of extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides
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探讨Pr/Sm单锑化物/铋化物极端磁阻的起源
DOI:
10.1103/physrevb.99.035158
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发表时间:
2019
影响因子:
3.7
通讯作者:
Liu Yang
中科院分区:
文献类型:
--
作者:
Wu Zhongzheng;Wu Fan;Li Peng;Guo Chunyu;Liu Yi;Sun Zhe;Cheng Cheng Maw;Chiang Tai Chang;Cao Chao;Yuan Huiqiu;Liu Yang
Combining angle-resolved photoemission spectroscopy and magneto-transport measurements, we systematically investigated the possible origin of the extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi, SmBi). Our photoemission measurements reveal that the bulk band inversion and surface states are absent (present) in Pr/Sm antimonides (bismuthides), implying that topological surface states are unlikely to play an important role for the observed extreme magnetoresistance. We found that the electron-hole compensation is well satisfied in all these compounds and the bulk band structure exhibits no obvious temperature dependence from 10 K up to 150 K. Simultaneous fittings of the magnetoresistance and Hall coefficient reveal that the carrier mobility is dramatically enhanced at low temperature, which naturally explains the suppression of extreme magnetoresistance at high temperatures. Our results therefore show that the extreme magnetoresistance in these compounds can be well accounted for by the two-band model with good electron-hole compensation. Finally, we found that both PrSb and SmSb exhibit highly linear bulk bands near the X point and lie close to the transition point between a topologically trivial and nontrivial phase, which might be relevant for the observed anomalous quantum oscillations.