Thermal stability of thermoelectric materials via in situ resistivity measurements.
Thermal stability of thermoelectric materials via in situ resistivity measurements.
复制标题
通过原位电阻率测量热电材料的热稳定性。
DOI：
10.1063/1.4767904
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
C. Opeil
中科院分区：
文献类型：
--
作者：
K. Lukas;W. S. Liu;Q. Jie;Z. Ren;C. Opeil
详细介绍了一种用于测定几种热电材料在20 < T < 550 °C温度范围内电阻率的实验装置。温度循环期间的一个电阻率测量针对Cu（0.01）Bi（2）Te（2.7）Se（0.3）进行并解释，第二个测量针对Yb（0.35）Co（4）Sb（12）进行，作为400 °C下时间的函数。两次测量均证实材料在所测量的温度范围和时间段内是热稳定的。在温度循环过程中进行的测量表明，当测量温度超过最高样品制造温度时，Cu（0.01）Bi（2）Te（2.7）Se（0.3）的电阻率不可逆地降低。这种系统的几种其他可能的用途包括但不限于研究退火和/或氧化作为温度和时间两者的函数的影响。
An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 °C is described in detail. One resistivity measurement during temperature cycling is performed and explained for Cu(0.01)Bi(2)Te(2.7)Se(0.3) and a second measurement is made on Yb(0.35)Co(4)Sb(12) as a function of time at 400 °C. Both measurements confirm that the materials are thermally stable for the temperature range and time period measured. Measurements made during temperature cycling show an irreversible decrease in the electrical resistivity of Cu(0.01)Bi(2)Te(2.7)Se(0.3) when the measuring temperature exceeds the maximum sample fabrication temperature. Several other possible uses of such a system include but are not limited to studying the effects of annealing and/or oxidation as a function of both temperature and time.
影响因子：
27.8
作者：
Liu, Wei-Shu;Zhang, Qinyong;Ren, Zhifeng
通讯作者：
Ren, Zhifeng