The Casting Method for Producing Solar-Grade Polycrystalline Silicon Wafer(I) -Thermal Modeling of Silicon Casting-
The Casting Method for Producing Solar-Grade Polycrystalline Silicon Wafer(I) -Thermal Modeling of Silicon Casting-
复制标题
太阳能级多晶硅片的铸造方法（一）-硅铸造的热模拟-
DOI：
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发表时间：
1989
影响因子：
2.7
通讯作者：
Poong Yoon
中科院分区：
文献类型：
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作者：
S. Moon;W. So;Poong Yoon
采用流延法制备了高效太阳能电池用多晶硅片。本文通过数学建模和数值计算，研究了硅铸锭设备的几何参数和热工参数，即坩埚壁厚、冷却器直径、冷却速度和坩埚壁温对硅铸锭晶体结构和尺寸的影响。具有柱状结构和大晶粒尺寸的多晶的生长被预测为有利的以下参数条件：i）使坩埚的侧壁尽可能厚并且底部尽可能薄，ii）保持与坩埚的侧壁相比顶部中的较高温度分布并且随着凝固进行降低冷却速率。
Polycrystalline silicon wafers for high efficiency solar cells were produced using the casting method. Mathematical modeling and numerical computations were made to investigate the effects of geometric parameters and thermal parameters of the casting equipment, that is, the wall thickness of the crucible, the cooler diameter, the cool-ing rate, and wall temperatures of the crucible on the crystalline structure and size of the silicon ingot. The growth of polycrystalline with the columnar structure and large grain size was predicted to be favored by the following conditions of parameters; i)making the side wall of crucible as thick as possible and the bottom as thin as possible, ii)keeping the higher temperature profile in the top compared to the side wall of the crucible and lowering the cooling rate as the solidification proceeds.