Room temperature photoluminescence at 4.5μm from InAsN
Room temperature photoluminescence at 4.5μm from InAsN
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DOI：
10.1063/1.2896638
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发表时间：
2008-03
影响因子：
3.2
通讯作者：
Q. Zhuang;A. Godenir;A. Krier;K. Lai;S. Haywood
中科院分区：
文献类型：
--
作者：
Q. Zhuang;A. Godenir;A. Krier;K. Lai;S. Haywood
研究了通过射频等离子体辅助分子束外延生长的 InAsN 外延层中的氮掺入随生长条件的变化。降低的生长速率、生长温度和砷通量显着增强了氮的掺入。最佳的生长条件使我们能够获得氮成分高达 2.5% 的高质量 InAsN。外延层表现出强烈的具有双峰特征的 4K 光致发光 (PL)，这归因于自由载流子复合和局域载流子复合。可获得波长高达 4.5μm 的强室温 PL 发射。
Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5μm is obtained.