Requirements for ultra-thin-film devices and new materials for the CMOS roadmap
Requirements for ultra-thin-film devices and new materials for the CMOS roadmap
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DOI：
10.1016/j.sse.2003.12.039
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发表时间：
2004-06-01
影响因子：
1.7
通讯作者：
Boeuf, F
中科院分区：
文献类型：
--
作者：
Fenouillet-Beranger, C;Skotnicki, T;Boeuf, F
第一次，各种器件架构（体，SOI和SON）和工艺模块（金属栅极，应变硅沟道）进行了比较，在一个一致的方式使用相同的分析工具。该分析一方面表明，传统的批量不能满足整个ITRS'01路线图的要求，但另一方面，它给出了明确的指导方针，允许这样做的设备架构。换句话说，本文提出了一个器件架构路线图，并精确地显示了在给定的CMOS节点将需要哪些架构，模块和材料。该信息分析对于半导体制造商、设备制造商和SOI晶片供应商可能是重要的。(C)2004爱思唯尔有限公司保留所有权利。
For the first time various devices architectures (bulk, SOI and SON) and process modules (metal gate, strained-Si channel) are compared in a consistent way using the same analytical tool. This analysis shows on one hand that the conventional bulk cannot match the requirements throughout the entire ITRS'01 roadmap, but on the other hand it gives clear guidelines on device architectures permitting to do so. In other words, this paper puts forward a device architecture roadmap and shows precisely which architectures, modules and materials will be needed at a given CMOS node. This message analysis may be of importance for semiconductor manufacturers, equipment makers and SOI wafer providers. (C) 2004 Elsevier Ltd. All rights reserved.