Development of the detector simulation framework for the Wideband Hybrid X-ray Imager onboard FORCE

Development of the detector simulation framework for the Wideband Hybrid X-ray Imager onboard FORCE
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开发用于 FORCE 机载宽带混合 X 射线成像仪的探测器模拟框架

DOI:
10.1016/j.nima.2020.164433
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发表时间:
2020
期刊:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
影响因子:
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通讯作者:
Tsuru Takeshi G.
Tsuru Takeshi G.
中科院分区:
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文献类型:
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作者:
Suzuki Hiromasa;Tamba Tsubasa;Odaka Hirokazu;Bamba Aya;Hagino Kouichi;Takeda Ayaki;Mori Koji;Hida Takahiro;Yukumoto Masataka;Nishioka Yusuke;Tsuru Takeshi G.

文献摘要

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FORCE是一项日美天基天文学使命,用于能量范围为1- 80千电子伏的X射线成像光谱学。作为主要焦平面探测器的宽带混合X射线成像仪(WHXI)将使用由硅和碲化镉(CdTe)组成的混合半导体成像仪堆栈。硅成像器将是某种类型的绝缘体上硅(SOI)像素传感器,命名为X射线像素(XRPIX)系列。由于该传感器具有小像素尺寸(30- 36 μ m)和厚敏感区域(300- 500 μ m),因此了解探测器响应并不简单,对于优化相机设计和评估科学能力非常重要。我们已经开发了一个框架来模拟观测天体源与半导体传感器。我们的模拟框架进行了测试和验证,通过比较我们的模拟结果,实验室测量使用XRPIX 6 H传感器。模拟器很好地再现了测量结果与合理的物理参数的传感器,包括电场结构,库仑排斥效应的载流子扩散,和安排的退化区域。该框架也适用于未来的XRPIX更新,包括将成为WHXI一部分的XRPIX更新,以及各种类型的半导体传感器。
FORCE is a Japan–US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1–80ákeV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager stack composed of silicon and cadmium telluride (CdTe). The silicon imager will be a certain type of the silicon-on-insulator (SOI) pixel sensor, named the X-ray pixel (XRPIX) series. Since the sensor has a small pixel size (30–36á μ m) and a thick sensitive region (300–500á μ m), understanding the detector response is not trivial and is important in order to optimize the camera design and to evaluate the scientific capabilities. We have developed a framework to simulate observations of celestial sources with semiconductor sensors. Our simulation framework was tested and validated by comparing our simulation results to laboratory measurements using the XRPIX 6H sensor. The simulator well reproduced the measurement results with reasonable physical parameters of the sensor including an electric field structure, a Coulomb repulsion effect on the carrier diffusion, and arrangement of the degraded regions. This framework is also applicable to future XRPIX updates including the one which will be part of the WHXI, as well as various types of semiconductor sensors.