Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor
Dynamic Exciton Funneling by Local Strain Control in a Monolayer Semiconductor
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DOI：
10.1021/acs.nanolett.0c02757
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发表时间：
2020-09-09
期刊：
影响因子：
10.8
通讯作者：
Englund, Dirk
中科院分区：
文献类型：
--
作者：
Moon, Hyowon;Grosso, Gabriele;Englund, Dirk
控制半导体中激子的能力是从激子电路到能量传输等众多应用的基础。二维（2D）半导体由于其大的激子结合能和巨大的可拉伸性而特别有希望用于室温应用。虽然应变诱导的静态激子通量已被观察到在预定的结构，激子通量的动态控制是一个突出的挑战。在这里，我们介绍了一种方法来调整悬浮的二维半导体的带隙，通过应用局部应变梯度与纳米尖端。这种应变使我们能够局部和可逆地转移激子能量，并在微米级的距离上控制激子通量。我们预计，我们的结果不仅标志着一个重要的实验工具，但也将打开一个广泛的新的应用，从信息处理到能量转换。
The ability to control excitons in semiconductors underlies numerous proposed applications, from excitonic circuits to energy transport. Two dimensional (2D) semiconductors are particularly promising for room-temperature applications due to their large exciton binding energy and enormous stretchability. Although the strain-induced static exciton flux has been observed in predetermined structures, dynamic control of exciton flux represents an outstanding challenge. Here, we introduce a method to tune the bandgap of suspended 2D semiconductors by applying a local strain gradient with a nanoscale tip. This strain allows us to locally and reversibly shift the exciton energy and to steer the exciton flux over micrometer-scale distances. We anticipate that our result not only marks an important experimental tool but will also open a broad range of new applications from information processing to energy conversion.