A Front-Side Released Single Crystalline Silicon Piezoresistive Microcantilever Sensor
A Front-Side Released Single Crystalline Silicon Piezoresistive Microcantilever Sensor
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DOI：
10.1109/jsen.2008.2012197
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发表时间：
2009-02
影响因子：
4.3
通讯作者：
Y. Zhou;Zheyao Wang;Qi Zhang;W. Ruan;Litian Liu
中科院分区：
文献类型：
--
作者：
Y. Zhou;Zheyao Wang;Qi Zhang;W. Ruan;Litian Liu
本文介绍了一种压阻式微悬臂梁传感器的设计、制作和表征。微悬臂梁由两个二氧化硅支撑层和一个单晶SOI层之间。在SOI层的表面植入压敏电阻，以利用其大的压阻系数。采用层合梁理论设计了微悬臂梁和压敏电阻。提出了一种利用SF6等离子体从硅片正面各向同性刻蚀微悬臂下方衬底的正面释放方法。SOI晶片和正面释放的特性使得压阻式微悬臂梁传感器的制造具有高均匀性和高成品率。利用免疫球蛋白G的抗原和抗体在传感器表面的特异性结合反应对传感器进行了验证，实验结果表明该传感器具有良好的便携式和集成化传感应用前景。
This paper presents the design, fabrication, and characterization of a piezoresistive microcantilever sensor fabricated on silicon-on-insulator (SOI) wafers. The microcantilever consists of two silicon dioxide supporting layers and a single crystalline SOI layer in-between. The piezoresistors are implanted in the surface of the SOI layer to exploit its large piezoresistive coefficients. Laminated beam theory is employed to design the microcantilevers and the piezoresistors. A front-side releasing method is developed to suspend the microcantilevers by isotropically etching the substrate beneath the microcantilevers from the front-side of the wafers using SF6 plasma. The features of SOI wafers and the front-side releasing enable high uniformity and high yield for the fabrication of piezoresistive microcantilever sensors. The sensors are validated using specific binding reaction of antigen and antibody of immunoglobulin G on the sensor surface, and the experimental results show that they are promising for portable and integrated sensing applications.