Luminescence from HgCdTe alloys
Luminescence from HgCdTe alloys
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DOI：
10.1063/1.329468
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发表时间：
1981-09
影响因子：
3.2
通讯作者：
A. Hunter;T. C. Mcgill
中科院分区：
文献类型：
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作者：
A. Hunter;T. C. Mcgill
报道了x=0.32和0.48的材料在Hg1−中观察到的能带发光、能带到受主发光和施主-受主发光，以及束缚激子复合发光。带间谱线形状和强度随泵浦功率的变化规律适用于无波矢守恒的复合过程的电子空穴等离子体。根据线形分离，我们估算了x=0.32和0.48材料的受主结合能分别为14.0±1.0和15.5±2.0 meV，施主结合能分别为1.0±1.0和4.5±2.0 meV。样品发光能量的移动意味着0.03厘米−1样品的成分发生了变化。
We report the observation in Hg1−xCdxTe of band‐to‐band, band‐to‐acceptor, and donor‐acceptor luminescence for material of x = 0.32 and 0.48, and bound exciton recombination luminescence, for material of 0.48. The band‐to‐band line shape and variation in intensity with pump power is appropriate to an electron‐hole plasma with recombination proceeding without wave vector conservation. From line shape separations, we estimate acceptor binding energies of 14.0±1.0 and 15.5±2.0 meV in x = 0.32 and 0.48 material, respectively, and donor binding energies of 1.0±1.0 and 4.5±2.0 meV, respectively. Shifts in luminescence energy across the sample imply a change in composition across the sample of 0.03 cm−1.