Angular dependence of antisymmetric magnetoresistance in Co-Tb thin films with artificial domain wall inclination
Angular dependence of antisymmetric magnetoresistance in Co-Tb thin films with artificial domain wall inclination
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DOI：
10.1088/1361-6463/ace4d6
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发表时间：
2023-07
期刊：
影响因子：
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通讯作者：
Zhen Wang;Li Wang;Yangtao Su;Tiankuo Xu;Yang Meng;Xinyu Cao;Ying Zhang;Hongwu Zhao
中科院分区：
文献类型：
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作者：
Zhen Wang;Li Wang;Yangtao Su;Tiankuo Xu;Yang Meng;Xinyu Cao;Ying Zhang;Hongwu Zhao
我们报道了在垂直磁化的人工变形的Co-Tb霍尔棒结构中观察到的角度相关的反对称磁电阻(MR)。同时的输运测量和磁畴成像表明，反对称磁流变是由于受几何限制而产生单一磁区壁(DW)倾角的结果，并且进一步与倾角相关的几何因子成正比。理论模型很好地描述了这一结果，该模型得到了非平衡电流和霍尔电压分布的解析和数值计算的支持。这一发现提供了一种直接而有效的方法来控制DW几何结构，从而导致了各种基于DW的自旋电子器件的应用。
We report the observation of angular-dependent antisymmetric magnetoresistance (MR) in artificially deformed Co-Tb Hall bar structures with perpendicular magnetization. Simultaneous transport measurements and domain imaging show that the antisymmetric MR results from the generation of a single domain wall (DW) inclination due to the restricted geometry and is further proportional to the inclination-associated geometry factor. The results are well described by a theoretical model that is supported by analytic and numerical calculations of the nonequilibrium current and Hall voltage distribution in the vicinity of the inclined DW. This finding provides a straightforward and effective approach to control DW geometries, leading to various DW-based spintronic device applications.