Minority‐carrier mobility in p‐type GaAs
Minority‐carrier mobility in p‐type GaAs
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DOI：
10.1063/1.325602
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发表时间：
1979-07
影响因子：
3.2
通讯作者：
W. Walukiewicz;J. Lagowski;L. Jastrzebski;H. Gatos
中科院分区：
文献类型：
--
作者：
W. Walukiewicz;J. Lagowski;L. Jastrzebski;H. Gatos
考虑了屏蔽效应和所有主要散射过程，对 p 型 GaAs 中的电子迁移率进行了理论计算。迁移率的计算值表示为载流子浓度、补偿比和温度的函数。指出了 p 型 GaAs 中少数载流子迁移率与 n 型 GaAs 中电子迁移率的基本区别。还提出了一个实用程序，用于根据可用的电子迁移率数据评估少数载流子迁移率。
Theoretical calculations of electron mobility in p‐type GaAs were carried out taking into consideration the screening effects and all major scattering processes. Calculated values of mobility are presented as a function of carrier concentration, compensation ratio, and temperature. The basic differences between minority‐carrier mobility in p‐type GaAs and electron mobility in n‐type GaAs are pointed out. A practical procedure is also presented for the evaluation of minority‐carrier mobility from available electron‐mobility data.