Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxy
Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxy
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DOI：
10.1063/1.369250
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发表时间：
1999-01
影响因子：
3.2
通讯作者：
D. Doppalapudi;S. Basu;T. Moustakas
中科院分区：
文献类型：
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作者：
D. Doppalapudi;S. Basu;T. Moustakas
本文报道了用分子束外延技术在A面蓝宝石衬底上生长的InGaN薄膜的长程原子有序化现象。InGaN薄膜在薄膜/衬底界面附近具有有序和无序相交替的磁区结构。靠近薄膜表面，不再观察到无序的磁区。发现有序度随着生长速率的增加而增加(在这些材料使用的低生长速率下)，这与有序化是表面现象是一致的。
Observation of long range atomic ordering in InGaN films grown by molecular beam epitaxy on A-plane sapphire is reported, based on x-ray diffraction and transmission electron microscopy studies. The InGaN films have a domain structure, with alternating domains of ordered and disordered phases, close to the film/substrate interface. Closer to the film surface, disordered domains are no longer observed. The degree of ordering was found to increase with growth rate (at the low growth rates used in these materials), which is consistent with ordering being a surface phenomenon.