Fabrication of MgZnO films by molecular precursor method and their application to UV-transparent electrodes
Fabrication of MgZnO films by molecular precursor method and their application to UV-transparent electrodes
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DOI：
10.1002/pssc.200880406
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发表时间：
2009-02
期刊：
影响因子：
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通讯作者：
Y. Mashiyama;K. Yoshioka;S. Komiyama;H. Nomura;S. Adachi;Mitsunobu Sato;T. Honda
中科院分区：
文献类型：
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作者：
Y. Mashiyama;K. Yoshioka;S. Komiyama;H. Nomura;S. Adachi;Mitsunobu Sato;T. Honda
采用分子前驱体法（MPM）制备了MgZnO薄膜，用于GaN基紫外发光二极管（LED）的近紫外透明电极。MPM制造需要一个通用的解决方案。澄清了氨水是Mg、Zn和Ga前体的常用溶剂。采用MgZnO前驱体溶液在石英玻璃衬底上成功制备了MgZnO薄膜。膜中Mg的固相组成为其在液相中的摩尔分数的40-50%。X-射线衍射图表明薄膜具有六方单相，与ZnO的情况相同。Ga掺杂的MgZnO薄膜，使其电阻率控制。讨论了MgZnO薄膜作为GaN基紫外发光二极管紫外透明电极的可能性。（© 2009 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
MgZnO thin films were fabricated by the molecular precursor method (MPM) for the realization of cost-effective near-ultraviolet (UV) transparent electrodes for GaN-based UV light-emitting diodes (LEDs). The fabrication by MPM requires a common solution. It was clarified that ammonia aqueous is a common solvent for Mg, Zn and Ga precursors. MgZnO thin film was successfully fabricated on a quartz glass substrate using MgZnO precursor solution. The solid phase composition of Mg in the film is 40-50% of its molar fraction in the liquid phase. The X-ray diffraction patterns indicate the films have a hexagonal single phase, the same as in the case of ZnO. Ga doping of the MgZnO films enables their resistivity control. The possibility of applying MgZnO films for UV transparent electrodes on GaN-based UV LEDs is discussed. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)