Diffraction study of the piezoelectric properties of low quartz
Diffraction study of the piezoelectric properties of low quartz
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低石英压电特性的衍射研究
DOI：
10.1140/epjb/e2004-00393-4
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
C. Lecomte
中科院分区：
文献类型：
--
作者：
R. Guillot;P. Fertey;N. Hansen;P. Allé;E. Elkaim;C. Lecomte
摘要：静电场对$\alpha $-石英晶体结构的影响已通过单晶的X射线衍射测定。通过频闪技术摇摆曲线测量准同时为零场和两个相反的强场（28.8千伏/厘米）施加在晶体a轴的方向。用最小二乘法测量和分析了高次反射（即对芯电子敏感）的相对强度变化。分析表明，Si-O键距受电场的影响很小，但SiO 4四面体的变形和重新取向都被诱导。该模型定性地与小振幅的诱导极化和压电系数。
Abstract.The effect of a static electric field on the crystal structure of $\alpha $-quartz has been determined by Xray diffraction on single crystals. By a stroboscopic technique rocking curves are measured quasi simultaneously for zero field and for two opposite strong fields (28.8 kV/cm) applied in the direction of the crystallographic a-axis. The relative intensity-changes of high order reflections (i.e. sensitive to the core electrons) were measured and analysed by a least squares method technique. The analysis indicates that the bond distances Si-O are very little affected by the field, but both a deformation and a reorientation of the SiO4 tetrahedra are induced. The model is qualitatively in agreement with the small amplitudes of the induced polarisation and the piezoelectric coefficients.