Origin of the high selectivity of the Pt-Rh thin-film H2 gas sensor studied by operando ambient-pressure X-ray photoelectron spectroscopy at working conditions
Origin of the high selectivity of the Pt-Rh thin-film H2 gas sensor studied by operando ambient-pressure X-ray photoelectron spectroscopy at working conditions
复制标题
工作条件下操作环境压力X射线光电子能谱研究Pt-Rh薄膜H2气体传感器高选择性的起源
DOI:
10.1021/acs.jpclett.2c02365
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发表时间:
2022
期刊:
影响因子:
--
通讯作者:
Hiroshi Kondoh
中科院分区:
文献类型:
--
作者:
Ryo Toyoshima;Takahisa Tanaka;Taro Kato;Ken Uchida;Hiroshi Kondoh
The Pt–Rh thin-film sensors exhibit excellent sensitivity and selectivity for H2gas detection. Here, we studied the mechanism of highly selective detection of H2by the Pt–Rh thin-film sensors with ambient-pressure X-ray photoelectron spectroscopy (AP–XPS) measurements at working conditions, which were paralleled with electric resistivity measurements. The elemental composition and chemical state of surface Pt and Rh drastically change depending on the background gas environments, which directly link to the sensor response. It is revealed that surface segregated Pt atoms accelerate dissociative adsorption of H2, resulting in a reduction of the sensor surface and then a decrease of electric resistivity of the film, whereas a thin oxidized Rh layer blocks dissociation of the other reducing agent, that is, NH3. This is supported from the adsorption energetics obtained by the density functional theory (DFT) calculations.