Continuously tunable temperature coefficient of resistivity in antiperovskite AgN1−xCxMn3 (0 ≤ x ≤ 0.15)
Continuously tunable temperature coefficient of resistivity in antiperovskite AgN1−xCxMn3 (0 ≤ x ≤ 0.15)
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DOI：
10.1063/1.4903699
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发表时间：
2014-12
影响因子：
3.2
通讯作者：
J. Lin;P. Tong;S. Lin;B. Wang;W. Song;Y. Sun
中科院分区：
文献类型：
--
作者：
J. Lin;P. Tong;S. Lin;B. Wang;W. Song;Y. Sun
合成了反钙钛矿金属间化合物AgN1 − xCxMn3（0 ≤ x ≤ 0.15）。随着x的增加，室温以上的电阻率温度系数（TCR）单调减小，并且最终在x = 0.1以上将符号从正变为负。同时，温度范围逐渐扩大。当x = 0.07时，在280~375 K之间，TCR为1.33ppm/K。电阻率及其斜率对外部磁场不敏感，表明磁散射或短程磁有序对所观察到的低TCR的贡献微不足道。如霍尔效应所表明的，与x = 0相比，x = 0.15的顺磁状态下的电荷载流子密度降低了一个数量级。TCR的降低和信号转换可能与载流子密度的降低和增强紊乱有关。
The antiperovskite intermetallic compounds AgN1−xCxMn3 (0 ≤ x ≤ 0.15) have been synthesized. As x increases, the temperature coefficient of resistivity (TCR) above room temperature decreases monotonically and finally changes the sign from positive to negative above x = 0.1. Meanwhile, the temperature range is gradually broadened. For x = 0.07, TCR is ∼3.1 ppm/K between 280 K and 375 K. Both the resistivity and its slope are insensitive to the external magnetic field, indicating an insignificant contribution from magnetic scattering or short-range magnetic ordering to the observed low-TCR. As manifested by the Hall effect, the charge carrier density in the paramagnetic state for x = 0.15 is reduced by an order of magnitude in comparison with that for x = 0. The reduction of carrier density and the enhancive disorders when x increases was proposed to be responsible for the decrease in TCR and its sign switch.