Experimental study of diffusion and segregation in a Si-(GexSi1-x) heterostructure.
Experimental study of diffusion and segregation in a Si-(GexSi1-x) heterostructure.
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Si-(GexSi1-x) 异质结构中扩散和偏析的实验研究。
DOI：
10.1103/physrevlett.67.1450
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发表时间：
1991
影响因子：
8.6
通讯作者：
Jack O. Chu
中科院分区：
文献类型：
--
作者：
Hu Sm;Ahlgren Dc;Ronsheim Pa;Jack O. Chu
本文对Si-（GexSi 1-x）异质结构中硼、磷和砷的分凝系数进行了实验研究。结果表明，硼倾向于偏聚到GexSi 1-x层中，而磷和砷则倾向于偏聚离开GexSi 1-x层，并在Hu的理论框架内对结果进行了讨论.重要的因素是异质结构的两个区域之间的«理想功函数»差异;该差异可以从带隙变化和带偏移估计
Experimental results have been obtained on the segregation coefficients of boron, phosphorus, and arsenic in the Si-(Ge x Si 1-x ) heterostructure. It is found that boron tends to segregate into the Ge x Si 1-x layer, while phosphorus and arsenic tend to segregate away from it. The results are discussed within the framework of Hu's recent theory. The important factor is the «ideal work function» difference between two regions of the heterostructure; this difference can be estimated from the band-gap change and the band offsets