High‐quality ZnO epilayers grown on Zn‐polar ZnO substrates by plasma‐assisted molecular beam epitaxy
High‐quality ZnO epilayers grown on Zn‐polar ZnO substrates by plasma‐assisted molecular beam epitaxy
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DOI：
10.1002/pssb.200304189
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发表时间：
2004-03
期刊：
影响因子：
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通讯作者：
H. Kato;M. Sano;K. Miyamoto;T. Yao
中科院分区：
文献类型：
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作者：
H. Kato;M. Sano;K. Miyamoto;T. Yao
采用等离子体辅助分子束外延技术在Zn极性ZnO衬底上生长了高质量的ZnO外延层。随着O/Zn流量比从化学计量增加到富O，生长模式从三维生长变为二维生长，（0002）和（10-10）ω摇摆曲线的线宽分别从471 arsec和1635 arsec急剧变窄到42 arsec和46 arsec。与蓝宝石上的ZnO以及器件级MOCVD生长的GaN相比，这些值更窄。此外，A-，B-激子（FEA，FE B），并在3.378，3.393，和3.424 eV的FEA的n = 2状态，分别清楚地观察到在低温（4.2 K）的光致发光光谱下生长的ZnO富O助熔剂条件。我们的研究结果表明，需要在高富氧的助熔剂条件下生长，以产生高质量的Zn极性ZnO薄膜。（© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
High‐quality ZnO epilayers have been grown on Zn‐polar ZnO substrates by plasma‐assisted molecular beam epitaxy. With increasing O/Zn flux ratio from the stoichiometric to the O‐rich, the growth mode changed from three‐ to two‐dimensional growth and the line widths of (0002) and (10–10) ω‐rocking curves showed dramatic narrowing from 471 to 42 arsec and from 1635 to 46 arcsec, respectively. These values are narrower compared to those of ZnO on sapphire and also those of device‐grade MOCVD‐grown GaN. Moreover, A‐, B‐excitons (FEA, FEB), and the n = 2 state of FEA at 3.378, 3.393, and 3.424 eV, respectively, were clearly observed in the low‐temperature (4.2 K) photoluminescence spectrum of ZnO grown under O‐rich flux conditions. Our results show that growth under high O‐rich flux conditions is required to produce high‐quality Zn‐polar ZnO films. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)