Zero-Dimensional PbS Quantum Dot-InGaZnO Film Heterostructure for Short-Wave Infrared Flat-Panel Imager
Zero-Dimensional PbS Quantum Dot-InGaZnO Film Heterostructure for Short-Wave Infrared Flat-Panel Imager
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DOI：
10.1021/acsphotonics.0c00594
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发表时间：
2020-08-19
期刊：
影响因子：
7
通讯作者：
Hwang, Do Kyung
中科院分区：
文献类型：
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作者：
Choi, Hyun Tae;Kang, Ji-Hoon;Hwang, Do Kyung
由于其在医疗诊断、环境监测和夜视等领域的应用潜力，对人眼不可见的短波红外（SWIR）检测的需求不断增长。PbS胶体量子点是一种很有前途的短波红外光吸收材料。在这里，我们报告的PbS QD/InGaZnO（IGZO）异质结为基础的光电晶体管和平板成像器的人眼安全的短波红外光电探测和高分辨率成像。在1310 nm短波红外光照射下，这种混合型光电晶体管表现出良好的电学性能和明显的光响应特性，最大响应率为10（4）A/W，比探测率为10（12）Jones。我们发现PbS QD配体分子显著影响环境稳定性。具有四丁基碘化铵（TBAI）配体的光电晶体管表现出优异的空气稳定性，在暴露于空气3周后没有严重降解，而具有乙二硫醇（EDT）配体的光电晶体管在2周内失去其SWIR检测能力。这种改进的空气稳定性可能与TBAI配体钝化效应相关，这通过X射线光电子能谱分析证实。PbS量子点的图案化的柔性IGZO晶体管阵列上，通过剥离的方法实现一个更实用的成像像素阵列。此外，我们展示了一个原型的1.3 μ m短波红外平板图像传感器阵列，建立其潜在的应用在先进的发展作为一个门可调，高灵敏度，高分辨率，大面积的平板短波红外成像仪。
There is a growing demand for human-eye-invisible short-wave infrared (SWIR) detection due to its potential in applications in areas such as medical diagnostics, environmental monitoring, and night vision. PbS colloidal quantum dots (QDs) are a promising light absorber for SWIR detection. Herein, we report on a PbS QD/InGaZnO (IGZO) heterostructure-based phototransistor and flat-panel imager for human-eye-safe SWIR photodetection and high-resolution imaging. Such hybrid phototransistors show good electrical performance and obvious photoresponse behaviors with a maximum responsivity of 10(4) A/W and specific detectivity of 10(12 )Jones under 1310 nm SWIR illumination. We found that PbS QD ligand molecules significantly impact the environmental stability. Phototransistors featuring a tetrabutylammonium iodide (TBAI) ligand exhibit excellent air stability with no serious degradation after exposure to air for 3 weeks, while phototransistors with ethanedithiol (EDT) ligands lose their SWIR detecting capability within 2 weeks. Such an improved air stability may be correlated with the TBAI ligand passivation effect that is confirmed by X-ray photoemission spectroscopy analyses. PbS QDs are patterned on the flexible IGZO transistor array by photolithographic lift-off method for implementing a more practical imaging pixel array. Furthermore, we demonstrate a prototype of 1.3 mu m SWIR flat-panel image sensor array, establishing its potential application in advanced developments as a gate-tunable, highly sensitive, high-resolution, and large area flat-panel SWIR imager.