Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition
Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition
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DOI：
10.1063/1.1840119
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发表时间：
2004-12
影响因子：
4
通讯作者：
M. Katagiri;J. Isoya;S. Koizumi;H. Kanda
中科院分区：
文献类型：
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作者：
M. Katagiri;J. Isoya;S. Koizumi;H. Kanda
在优化的生长条件下，在微波辅助的化学蒸汽沉积中，磷氧化液的磷浓度可以在薄膜中以低掺杂水平为1016cm-3。磷浓度高于1×1016厘米3的膜的类型电导率可重复确认，在温度范围内，在300toto 873k的温度范围内，室温下的最高值为660cm2。浓度为7 x 1016cm-3。
Lightly phosphorus-doped {111} homoepitaxial diamond films have been grown by microwave plasma-assisted chemical vapor deposition under optimized growth conditions. The Phosphorus concentration in the film can be controlled at a low doping level of the order of 1016cm−3. N-type conductivity of the films with phosphorus concentrations above 1×1016cm−3 is reproducibly confirmed by Hall-effect measurements in the temperature range from 300to873K. The highest value of the Hall mobility at room temperature is 660cm2∕Vs obtained for a film with a phosphorus concentration of 7×1016cm−3.