Modelling polycrystalline semiconductor solar cells

Modelling polycrystalline semiconductor solar cells
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DOI:
10.1016/s0040-6090(99)00825-1
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发表时间:
2000-02-21
期刊:
影响因子:
2.1
通讯作者:
Degrave, S
Degrave, S
中科院分区:
材料科学3区
文献类型:
--
作者:
Burgelman, M;Nollet, P;Degrave, S

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概述了多晶薄膜太阳能电池中存在的各种电子效应,这些效应在标准晶体硅太阳能电池中不会发生。本文解释了这些效应是如何在作者所在研究所开发的太阳能电池数值模拟工具SCAPS中进行数值处理的。讨论了SCAPS的功能和局限性。给出了电流-电压、电容-电压和电容-频率特性的仿真实例。对CdTe和Cu(In,Ga)Se-2太阳能电池的模拟和测量结果进行了讨论。(C) 2000 Elsevier Science S.A.版权所有
An overview is given of various electronic effects present in polycrystalline thin film solar cells, which do not occur in standard crystalline Si solar cells. It is explained how these effects are treated numerically in a numerical solar cell simulation tool, SCAPS, developed at the author's institute. The capabilities and limitations of SCAPS are discussed. Simulation examples of current-voltage, capacitance-voltage and capacitance-frequency characteristics are given. The agreement between the simulations and measurements is shown and discussed, both for CdTe and for Cu(In,Ga)Se-2 solar cells. (C) 2000 Elsevier Science S.A. All rights reserved.