Tungsten Schottky emitters with reservoirs of metal oxide or nitride
Tungsten Schottky emitters with reservoirs of metal oxide or nitride
复制标题
具有金属氧化物或氮化物储层的钨肖特基发射器
DOI：
10.1016/s0169-4332(99)00029-x
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
H. Shinada
中科院分区：
文献类型：
--
作者：
H. Nishiyama;T. Ohshima;H. Shinada
To obtain highly stable electron emission with a narrow energy width, we have investigated the electron emission characteristics of tungsten Schottky emitters made with various reservoir materials. The work functions of the adsorbed layers were calculated by using a simple electric dipole model, and we found that M1/O/W (M1=Sc, V, Y, Nb or La) and M2/N/W (M2=Ti, V, Y, Zr, Nb or La) compositions were expected to have a lower work function than that of the conventional Zr/O/W Schottky emitter. We formed M1/O/W and M2/N/W Schottky emitters and measured their electron emission properties. The Sc/O/W, Nb/O/W, and Y/N/W Schottky emitters produced a continuous and confined electron beam at tip temperatures below 1800 K of the Zr/O/W Schottky emitter, and the energy widths of their Schottky-emitted electrons were equal to or narrower than the 0.4 eV of the Zr/O/W Schottky emitter. The Sc/O/W Schottky emitter had the narrowest width at 0.25 eV.
